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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1277 2SD1277A DESCRIPTION With TO-220Fa package Complement to type 2SB951/951A High DC current gain High-speed switching APPLICATIONS For medium speed power switching PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO INC E SEM ANG H 2SD1277 2SD1277A 2SD1277 2SD1277A OND IC CONDITIONS TOR UC VALUE 60 80 60 UNIT Open emitter V Collector-emitter voltage Open base 80 Open collector 7 8 12 TC=25ae 45 V VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-Peak V A A PC Collector power dissipation Ta=25ae 2 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1277 2SD1277A CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER 2SD1277 IC=30mA , IB=0 2SD1277A IC=4A; IB=8mA IC=4A ;IB=8mA VCB=60V ;IE=0 0.1 2SD1277A VCB=80V; IE=0 VEB=7V; IC=0 IC=8A ; VCE=3V IC=4A ; VCE=3V 500 2000 2 mA mA 80 1.5 2 V V CONDITIONS MIN 60 V TYP. MAX UNIT SYMBOL V(BR)CEO Collector-emitter breakdown voltage VCEsat VBEsat Collector-emitter saturation voltage Base-emitter saturation voltage 2SD1277 ICBO Collector cut-off current IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Switching times ton tstg tf Fall time Transition frequency ANG H INC Turn-on time MIC E SE IC=4A ;IB1=8mA IB2=-8mA;VCC=50V IC=0.5A; VCE=10V;f=1MHz OND 20 TOR UC 10000 0.5 4.0 1.0 MHz |I |I |I s s s Storage time hFE-2 Classifications Q 2000-5000 R 4000-10000 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1277 2SD1277A PACKAGE OUTLINE CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 |
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